한국군사과학기술학회지 (Journal of the Korea Institute of Military Science and Technology)

  • 제6권3호
  • /
  • Pages.44-53
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  • 2003
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  • 1598-9127(pISSN)
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  • 2636-0640(eISSN)
한국군사과학기술학회 (The Korea Institute of Military Science and Technology)
권호 표지

상온 ECR-MOCVD에 의해 제조되는 Cu/C박막특성

Characteristics of copper/C films on PET substrate prepared by ECR-MOCVD at room temperature

  • 발행 : 2003.09.01
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초록

Cu/C films were prepared at room temperature under $Cu(hfac)_2-Ar-H_2$ atmosphere in order to obtain metallized polymer by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The room temperature MOCVD on polymer substrate could be possible by collaboration of ECR and a DC bias. Structural analysis of the films by ECR was found that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. The increase in $H_2$ contents brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with low sheet electric resistance were prepared in argon atmosphere. The electric sheet resistance of Cu/C films with good interfacial property were controlled at $10^8$~$10^0$ Ohm/sq. ranges by the $H_2$/Ar mole ratio and the shielding effectiveness of the film showed maximum up to 45dB in the our experimental range.

키워드

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