대한전자공학회논문지TC (Journal of the Institute of Electronics Engineers of Korea TC)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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위상특성을 개선시킨 2 Bits MMIC 위상변위기

2 Bits MMIC Phase Shifter Improving the Phase Characteristic

  • 발행 : 2003.09.01
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⟨ 이전 논문 다음 논문 ⟩

초록

Lange 커플러를 이용한 반사구조 위상변위기는 광대역에서 위상변이를 얻는데 사용되는 회로이다. 이런 5-비트 반사구조에서 33.75°는 대개 11.25°와 22.5°를 동시에 "on"시켜서 얻는 방법이 사용되어져 왔다. 본 논문은 33.75° 위상특성을 개선하기 위하여 GaAs PM 다이오드와 리액티브 부하로 구성된 별도의 회로를 제안하였으며 MMIC로 구현하였다. 2-6 GHz에서 제안된 회로는 기 발표 논문에 비하여 33.75°를 기준으로 할 때 평균 4.7° 개선된 특성을 얻었다. 기존 회로와 비교할 때 삽입손실 및 반사손실은 거의 변화가 없었다.

Reflection type phase shifter with Lange coupler is widely used as a circuit topology to obtain phase shift in broadband operation. The phase shift of 33.75$^{\circ}$ at this type is achieved by simultaneously turning on both 11.25$^{\circ}$ and 22.5$^{\circ}$ . In order to improve the phase accuracy of 33.75$^{\circ}$, this paper proposes the additional circuit which is composed of a GaAs PIN diode and a reactive load. By utilizing MMIC technology. Over the 2-6 GHz band, the measured result of phase difference between the previous circuit and the proposed circuit shows average 4.7$^{\circ}$ on the basis of 33.75$^{\circ}$. Insertion loss and return loss are invariant in comparison with the previous circuit.

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참고문헌

  1. K. Zuefle, F. Steinhagen, W. H. Haydel, and A. Hulsmann, 'Coplanar 4-Bit HEMT Phase Shifters for 94 GHz Phased Array Radar Systems,' IEEE MTT-S, pp. 303-306, 1999 https://doi.org/10.1109/MWSYM.1999.779480
  2. Christopher Moye, et al., 'A Compact Broadband, Six-bit MMIC Phasor with Integrated Digital Drivers,' IEEE MTT-S, pp. 457-460, 1990 https://doi.org/10.1109/MWSYM.1990.99618
  3. M.J. Schindler, M.E. Miller, 'A 3 Bit K/Ka Band MMIC Phae Shifter,' IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium, pp. 95-98, 1988 https://doi.org/10.1109/MCS.1988.197298
  4. D.C.Boire and R.arion, 'A High Performance 6-18 GHz Five Bit MMIC Phase Shifter,' IEEE GaAs IC Symposium Digest, pp. 267-270, 1995 https://doi.org/10.1109/GAAS.1995.529009
  5. A. opinath, 'Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements,' IEEE Electron Device Letters, vol. EDL-6, no. 10, Oct. 1985