E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제16권9호
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- Pages.63.1-63
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- 2003
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Al$_2$ O$_3$ formation on Si by catalytic chemical vapour deposition
- Ogita, Yoh-Ichiro (Dept. of Electrical and Electronic Engineering, kanagawa Institute of Technology) ;
- Shinshi Iehara (Dept. of Electrical and Electronic Engineering, kanagawa Institute of Technology) ;
- Toshiyuki Tomita (Dept. of Electrical and Electronic Engineering, kanagawa Institute of Technology)
- 발행 : 2003.09.01
초록
Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina(Al
키워드