E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제16권9호
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- Pages.62.3-63
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- 2003
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Effective electron mobility in Si inversion in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering
- Fischetti, Massimo V. (Division, Thomas J. Watson Research Center) ;
- Caritier, Eduard A. (Division, Thomas J. Watson Research Center)
- 발행 : 2003.09.01