Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structure and Electron Emission Properties of CN Nanostructures Obtained by HIP Apparatus

HIP에 의해 합성된 CN nanostructures의 구조 및 전계방출 특성

  • 오정근 (한국과학기술연구원 마이크로시스템, 충북대학교 반도체공학과) ;
  • 이양두 (한국과학기술연구원 마이크로시스템) ;
  • 문승일 (한국과학기술연구원 마이크로시스템) ;
  • 양석현 (충북대학교 반도체공학과) ;
  • 이윤희 (고려대학교 물리학과) ;
  • 김남수 (충북대학교 반도체공학과) ;
  • 주병권 (한국과학기술연구원 마이크로시스템)
  • Published : 2003.08.01
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Abstract

The CN(carbon nitrogen) nanofibers were formed by HIP(high isostatic pressure) process. From the field emission measurement, CN nanofibers shows an excellent characteristics of emitter, better than CNTs and carbon nanofibers. The structures obtained can be divided into three groups : bamboo-like fibers, corrugated structures and bead necklace-like fib res. Emission properties of CN nanofibers were investigated for spacing, between anode and cathode, variation. Turn-on fields was 1.4 v/$\mu\textrm{m}$. The time reliability and light emission test were carried out for about 100 hours. We suggest that CN nanofibers can be possibly applied to the high brightness flat lamp because of low turn-on field and time reliability

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