Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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A 1.8 GHz SiGe HBT VCO using 0.5μm BiCMOS Process

  • Published : 2003.05.01
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Abstract

In this paper, we fabricated an 1.8 ㎓ differential VCO using a commercial 0.5 ${\mu}{\textrm}{m}$ SiGe BiCMOS process technology, The fabricated VCO consumes 16 ㎃ at 3 V supply voltage and has a 1.2 $\times$ 1.6 $mm^2$TEX>chip area. A phase noise measured at 100 KHz offset carrier is -110 ㏈c/Hz and a tuning range is 1795 MHz~1910 MHz when two varactor diodes are biased from 0 V to 3 V.

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