Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of the Annealing Effect of 0.5 % Ce-doped Ba(Zr0.2Ti0.8)O3 Thin Films Grown by Rf Magnetron Sputtering Method

RF 마그네트론 스퍼터링법으로 성장시킨 0.5% Ce-doped Ba(Zr0.2Ti0.8)O3 (BCZT) 박막의 열처리 특성분석

  • 최원석 (성균관대학교 정보통신공학부) ;
  • 박용섭 (성균관대학교 정보통신공학부) ;
  • 이준신 (성균관대학교 정보통신공학부) ;
  • 홍병유 (성균관대학교 정보통신공학부)
  • Published : 2003.05.01
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Abstract

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

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References

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