참고문헌
- J. of KIEEME(in korean) v.13 no.4 Fabrication and characteristics of PZT ferroelectric thin films by sol-gel processing and rapid thermal annealing D. S. Paik;J. H. Kim;H. U. Choi;K. S. Kim
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Intergrated Ferroelectrics
v.17
Temperature dependence of the ferroeletric properties of
$SrBi_2Ta_2O_9$ thin films Takehiro Noguchi;Takashi Hase;Yoichi Miyasaka https://doi.org/10.1080/10584589708012981 -
Jpn. J. Appl. Phys.
v.37
no.9B
Effect of
$H_2$ sintering and Pt upper electrode on metallic Bi content in$SrBi_2Ta_2O_9$ thin films for ferroelectric memories prepared by sol - gel method Ichiro Koiwa;Takao Kanehara;Hiroyo Kato;Sachiko Ono;Alira Sakakibara;Tetsuya Osaka;Katsuhiko Asami https://doi.org/10.1143/JJAP.37.5192 -
Jpn. J. Appl. Phys.
v.37
Effects of morphological changes of
$Pt/SrBi_2Ta_2O_9$ interface on the electrical properties of ferroelectric capacitor D. S. Shin;H. N. Lee;C. W. Lee;Y. T. Kim;I. H. Choi https://doi.org/10.1143/JJAP.37.5189 -
J. Appl. Phys.
v.87
no.6
Aging behavior and recovery of polarization in
$Sr_{0.8}Bi_{2.4}Ta_2O_9$ thin films S. Y. Chen;S. K. Dey;Y. Torrii https://doi.org/10.1063/1.372298 -
Jpn. J. Appl. Phys.
v.37
no.9B
Low-temperature synthesis of
$SrBi_2Ta_2O_9$ ferroelectric thin films through the complex alkoxide method: effects of functional group, hydrolysis and water vapor treatment Kazumi Kato;Sachiko Ono;Alira Sakakibara. https://doi.org/10.1143/JJAP.37.5178 - J. OF KIEEME(in korean) v.12 no.2 Electrical properties of SBT feroelectric thin films prepared by MOD C. I. Cheon;J. S. Kim;D. L. Kwong
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Journal of the Institute of Electronics Engineering of Korea
v.35-D
no.3
Preparation and characterization of
$SrBi_2Ta_2O_9$ ferroelectric thin films for nonvolatile memory H. J. Chang;K. J. Suh;G. K. Changl -
Intergrated Ferroelectrics
v.14
Phase formation and characterization of the
$SrBi_2Ta_2O_9$ layered perovskite ferroelectric M. A. Rodrinues(et al) https://doi.org/10.1080/10584589708019993 - 광운대학교 대학원 박사학위논문 RF 스퍼터링법에 의한 SCT계 반도체 회로용 소자 제조 및 전기적 특성에 관한 연구 김진사