대한기계학회논문집B (Transactions of the Korean Society of Mechanical Engineers B)

  • 제26권10호
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  • Pages.1406-1418
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  • 2002
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  • 1226-4881(pISSN)
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  • 2288-5324(eISSN)
대한기계학회 (The Korean Society of Mechanical Engineers)
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플라즈마 식각장치내 노즐의 위치에 따른 희박기체유동 및 알루미늄 식각률의 변화에 관한 연구

Effects of Nozzle Locations on the Rarefied Gas Flows and Al Etch Rate in a Plasma Etcher

  • 황영규 (성균관대학교 기계공학부) ;
  • 허중식 (성균관대학교 기계공학부)
  • 발행 : 2002.10.01
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초록

The direct simulation Monte Carlo(DSMC) method is employed to calculate the etch rate on Al wafer. The etchant is assumed to be Cl$_2$. The etching process of an Al wafer in a helicon plasma etcher is examined by simulating molecular collisions of reactant and product. The flow field inside a plasma etch reactor is also simulated by the DSMC method fur a chlorine feed gas flow. The surface reaction on the Al wafer is simply modelled by one-step reaction: 3C1$_2$+2Allongrightarrow1 2AIC1$_3$. The gas flow inside the reactor is compared for six different nozzle locations. It is found that the flow field inside the reactor is affected by the nozzle locations. The Cl$_2$ number density on the wafer decreases as the nozzle location moves toward the side of the reactor. Also, the present numerical results show that the nozzle location 1, which is at the top of the reactor chamber, produces a higher etch rate.

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참고문헌

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