한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제35권2호
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  • Pages.113-121
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  • 2002
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  • 1225-8024(pISSN)
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  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지

고주파 마그네트론 스퍼터링으로 제조한 SiO$_2$ 절연박막의 구조분석 및 절연저항에 관한 연구

Insulation Properties and Microstructure of SiO$_2$ Film Prepared by rf Magnetron Sputtering

  • 발행 : 2002.04.01
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초록

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

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참고문헌

  1. O. Dossel, Sensors and Actuators, 6,169 (1984) https://doi.org/10.1016/0250-6874(84)80018-9
  2. B. Morten, M. Prudenziati and A. Tarami, Sen-sorsandActuators,4,237 (1983) https://doi.org/10.1016/0250-6874(83)85029-X
  3. P.CiureanuandS.Middelhoek, 'ThinFilmRe-sistive Sensors', Inst. of Phys. Pub., Ch. 3.(1992)
  4. D. W. Burns and H. Guckel, J. Vac. Sci. Tech., A (8), 3606 (1990)
  5. K. Bethe and D. Schon, Philips Tech. Rev., 39, 94 (1980)
  6. H. Suzuki and M. Utsunomiya, Technical Digest of the 9th Sensor Symposium, 149 (1990)
  7. T. Bravo, A. Tesalvi and A. Tosi, Sensors and ActuatorsA,32,612(992)
  8. P. Kayser, J. C. Godefroy and L. Leca, Sensors andActuators, A, 37-38,328 (1993)
  9. W. Hongye and Liu Kun, Sensors and Actuators A, 35,215 (1993)
  10. A. Garcia-Alonso, X. Huizti, E. Castario, I. Obi-eta and F. J. Gracia, Sensors and Actuators, A, 37-38,703(1993)
  11. 민남기, 이헌용 ' 최신계측공학 ', 동일출판사, pp234,1982
  12. T. Nakayama, J. Electrochem. Soc, 141, 237(1994) https://doi.org/10.1149/1.2054690
  13. J. J. Delima and A. E. Owen, 'Thin Solid Films, 195,159 (1991)
  14. 박영배 , 강진규, 이시우, 한국재료학회지 , 5, 706(1995)
  15. Y. K. Su and U. H. Liaw, J. Appl. Phys. 76, 4719 (1994) https://doi.org/10.1063/1.357265
  16. W. A. Pliskin and H. S. Lehman, J. Electrochem. Soc,112,1013 (1965) https://doi.org/10.1149/1.2423333
  17. W. A. Pliskin, D. R. Kerr, and J. A. Perri, 'Phys-ics of Thin Films 'Vol. 4, Academic press, PP 270-289,1970
  18. T. Serikawa and S. Shirai, Jpn. J. Apply. Phys. part 1,7B, 33,4465 (1994) https://doi.org/10.1143/JJAP.33.4465
  19. H. Takahashi, H. Nagata and H. Kataoka, J. Appl. Phys, 75, 2667 (1994) https://doi.org/10.1063/1.356219
  20. H. Takahashi, H. Nagata and H. Kataoka, Thin Solid Films, 277,132 (1996) https://doi.org/10.1016/0040-6090(95)08016-3