Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Air-Bridge Interconnected Coplanar Waveguides Fabricated on Oxidized Porous Silicon(OPS) Substrate for MMIC Applications

산화된 다공질 실리콘 기판 위에 제작된 MMIC용 Air-Bridge Interconnected Coplanar Waveguides

  • 심준환 (한국해양대학교 전파 ·정보통신공학부) ;
  • 권재우 (경북대학교 전자전기컴퓨터공학부) ;
  • 박정용 (경북대학교 전자전기컴퓨터공학부) ;
  • 이동인 (경북대학교 전자전기컴퓨터공학부) ;
  • 김진양 (아주대학교 전자공학부) ;
  • 이해영 (아주대학교 전자공학부) ;
  • 이종현 (경북대학교 전자전기컴퓨터공학부)
  • Published : 2002.04.01
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Abstract

In this paper, to improve the characteristics of a transmission line on silicon substrate, we fabricated air-bridge interconnected CPW transmission line on a 10-${\mu}{\textrm}{m}$-thick oxidized porous silicon(OPS) substrate using surface micromachining. Air-bridge interconnected CPW of S-W-S = 30-80-30 ${\mu}{\textrm}{m}$has insertion loss of -0.25 ㏈ and return loss of -28.9 ㏈ at 4㎓ And return loss of CPW with stepped compensated air-bridge(S-W-S : 30-100-30 ${\mu}{\textrm}{m}$) is improved -0.98㏈ at 4㎓. The results indicate that the thick OPS provides an approach to incorporate high performance, low cost microwave and millimeter wave circuits in a high-resistivity silicon-based process.

본 논문에서는 실리콘 기판상의 전송선로 특성을 개선하기 위하여 표면 마이크로머시닝 기술을 이용하여 10㎛ 두께의 다공질 실리콘 산화막으로 제조된 기판 위에 air-bridge interconnect된 CPW 전송선로를 제작하였다. 간격이 30㎛ 신호선이 80㎛인 CPW air-bridge 전송선의 삽입손실은 4㎓에서 -0.25 ㏈이며, 반사손실은 -28.9 ㏈를 나타내었다. S-W-S = 30-100-30 ㎛인 stepped compensated air-bridge를 가진 CPW는 손실이 4㎓일 때, -0.98 ㏈ 개선됨을 알 수 있었다. 이와 같은 결과로부터 두꺼운 다공질 실리콘은 고 저항 실리콘 집적회로 공정에서 고성능, 저가의 마이크로파 및 밀리미터파 회로 응용에 충분히 활용 될 수 있으리라 기대된다.

Keywords

References

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