한국전자파학회논문지 (The Journal of Korean Institute of Electromagnetic Engineering and Science)

  • 제12권6호
  • /
  • Pages.890-898
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  • 2001
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  • 1226-3133(pISSN)
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  • 2288-226X(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
권호 표지

Modified Materka Model를 이용한 4H-SiC MESFET 대신호 모델링

4H-SiC MESFET Large Signal Modeling using Modified Materka Model

  • 발행 : 2001.10.01
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⟨ 이전 논문 다음 논문 ⟩

초록

Modified Materka-Kacprzak 대신호 MESFET(Metal Semiconductor Field Effect Transistor) model을 사용하여 4H-SiC MESFET의 대신호 모델링을 수행하였다. Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하여 4H-SiC MESFET 소자 시뮬레이션을 수행하고, 이 결과를 modified Materka 대신호 모델을 사용하여 모델링 하였다. 시뮬레이션 및 모델링 결과는 -8 V의 pinch off 전압과 $V_{GS}$ =0 V, $V_{DS}$ =25 V에서 $I_{DSS}$270 mA/mm, $G_{m}$ =52.8 ms/mm를 얻을 수 있었고, 전력 특성 시뮬레이션을 통해 2GHz, $V_{GS}$ =-4V, $V_{DS}$ =25 V에서 10dB의 Gain과 34dBm(1 dB compression point)의 출력전력, 7.6W/mm의 전력밀도, 37%의 PAE(power added efficiency)를 얻을 수 있었다.다.

4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

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참고문헌

  1. SiC Materials and Devices : Semi-conductors and Semimetals v.52 Y. S. Park
  2. IEEE Electron Device Latter v.18 no.2 4H-SiC MESFET with 65.7% Power Added Efficiency at 850 MHz K. E. Moore(et.)
  3. Microwave Journal wide bangap semiconductor transistors for microwave power amplifiers R. J. Trew
  4. IEEE Transactions on Microwave Theory Tech. v.MTT-33 no.2 Computer calculation of large-signal GaAs FET amplifier characteristics A. Materka;T. Kacprzak
  5. Proceedings of 1995 International Symposium on Power Semiconductor Device & ICs High-Efficiency Performance of Microwave Power 4H-0SiC Amplifiers M. W. Shin
  6. IEEE Electron Device Letters v.16 no.10 Comparison of SiC, GaAs, and Si RF MESFET power densities Charles E. Weitzel
  7. MMIC Design: GaAs FET’s and HEMT’s. P. H. Ladbrooke
  8. 광운대학교 석사학위 논문 A study on the automated extraction of the modifide Materka large signal model for GaAs FET devices H. K. Choi
  9. IEEE Transactions on Microwave Theory Tech. v.MTT-36 no.7 A New Method for Determining the FET Small-Signal Equivalent Circuit G. Dambrine;A. CAPPY
  10. Proc. 12th European Microwave Conf. Measurement of the extrinsic series element of a microwave MESFET under zero current condition F. Diamant;M. Laviron