Journal of Mechanical Science and Technology

  • 제15권12호
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  • Pages.1876-1881
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  • 2001
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  • 1738-494X(pISSN)
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  • 1976-3824(eISSN)
대한기계학회 (The Korean Society of Mechanical Engineers)
권호 표지

GSMAC-FEM Analysis of Single-Crystal Growth by CUSP MCZ Method

  • Jung, Chung-Hyo (Faculty of Science and Technology, Keio University) ;
  • Takahiko Tanahashi (Faculty of Science and Technology, Keio University) ;
  • Yuji Ogawa (Keyence Corporation, 1-3-14, Higashinakazima, Higashiyodokawa-ku)
  • 발행 : 2001.12.01
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초록

We present the numerical analysis of the growth of a silicon (Si) single crystal. In the MCZ (Magnetic-field-applied Czochralski) method, two magnetic fields that stand opposite to each other generate a cusp magnetic field. In this work, the three cusp magnetic fields used for the analysis are an extern magnetic field, a surface magnetic field and an internal magnetic field. Each case was evaluated mainly as to the degree of stirring, shaft symmetry and the stability of the flow. As a result, the cusp magnetic field that yielded to best conditions was the internal magneic field.

키워드

참고문헌

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