참고문헌
- J. KIEEME v.14 A study on Electrical and optical characteriatics of InAs/GaAs self-organized quantum dots K.Kim;C.Park;I.Bae;J.Son;B.Moon;J.Lee
- J. KIEEME v.13 Surface photovoltage of Al/sub0.3/Ga/sub0.7/As/GaAs multi-quantum well structures J.lee;K.Kim;J.Son;I.Bae;I.Kim;S.B.Park
- J. KIEEME v.7 Structural analysis of low temperature processed Schottky contacts to n-GaAs H.Lee
- J. Vac. Sci. Technol. B v.11 Optical analysis of quantum confined Stak effect in overgrown InGaAs/InP quantum wires O.Schilling;A.Forchel;A.Kohl;S.Brirtner
- Phys. Rev. B v.53 Linear and nonlinear optecal properties of realistic quantum-wire structures:The dominant role of Coulomb correlation F.Rossi;E.Molinari
- Phys. Rev. Lett. v.78 Shape-independent scaling of excitonic confinement in realistic quantum Wires F.Rossi;G.Goldoni;E.Molinari
- J. Appl.Phys. v.88 Influence of strain and quantum confinement on the optical properties of InGaAs/GaAs V-groove quantum wires C.Constanin;E.Martinet;F.Lelarge;K.Leifer;A.Rudra;E.Kapon
- J. Crystal Growth v.221 Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices C.Son;T.G.Kim;X-L.Wang;M.Ogura
- Jpn. J. Appl. Phys. v.33 Operation of 780nm AlGaAs distributed feedback lasers at 100°C with low-loss waveguide strutrue K.Inoguchi;H.Kudo;S.Sugahara;S.Ito;H.Yagi;H.Takiguchi
- Appl. Phys. Lett. v.73 1.1 W continuous,narrow spectral width (<1A) emission from broad-stripe distributed-feedback diode lasers (λ=0.893μm) T.Earles;L.J.Mawst;D.Botez
- Appl. Phys. Lett. v.75 Effect of indium segregation on optical properties of V-groove InGaAs/GaAs strained quantum wires F.Lelarge;C.Constantin;K.Leifer;A.Condo;V.Iakovlev;E.Martinet;A.Rudra;E.Kapon
- Appl. Phys. Lett. v.69 Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method T.G.Kim;E.K.Kim;S.K.Min;J.H.Park
- J. Crystal Growth v.71 Thermal deformation of surface corrugations on InGaAsP crystals H.Nagai;Y.Noguchi;T.Matsuoka
- Appl. Phys. Lett. v.67 Carrier capture efficiency of AlGaAs/GaAs quantum wires affected by composition nonuniformity of an AlGaAs barrier layer X.Wang;M.Ogura;H.Matsuhata