• 한국재료학회지
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• 제13권8호
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.697-700
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• 2004

We propose a method that realizes the modified illumination by implementing a binary phase grating at the backside of a photomask. By modeling the relationship between the shape of a grating on the photomask and the light intensity at the pupil plane, we developed a program named MIDAS that finds the optimum grating pattern with a stochastic approach. After applying the program to several examples, we found that the program finds the grating pattern for the modified illumination that we want. By applying the grating at the backside of a photomask, the light efficiency of modified illumination may be improved.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.212-215
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• 2005

Modified illumination techniques have been used to enhance the resolution of the sub-wavelength lithography. But, since they shield the central part of incident light, the light efficiency is seriously degraded, which in turn reduces the throughput of a lithography process. In this research, we introduced an annular illumination structure that enhances the light efficiency with a concentric circular grating at the backside of a photomask. The efficiency of the structure was theoretically analyzed.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.305-309
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• 2010

Photopolymer films containing fluorescent anthracene polymer, polymethyleneanthracene (PMAn), were prepared with different concentrations of PMAn for holographic recording useful for security documents. The fluorescent photopolymer film showed enhanced fluorescent intensity due to the micro-separation which arose from grating formation and diffusion during photopolymerization. Experimental values of diffraction efficiency were well matched to the simulated values for photopolymers having different PMAn concentrations. Holography patterning was carried out using the fluorescent photopolymer under a photo-mask. A grating was confirmed using microscope techniques in the recorded area under the pattern. Importantly the recorded area showed enhanced fluorescence compared to the unrecorded part, allowing fluorescence patterns at micro scale along with the submicron grating pattern. The fluorescence pattern recorded on the photopolymer film provides additional readability of holographic reading and thus is useful for secure recording and reading of information.

• 한국레이저가공학회지
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• 제8권1호
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• pp.39-44
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• 2005

We report experimental results on the periodic patterning using a Ti:sapphire femtosecond laser (800nm, 100fs, 1kHz). Periodic structures with reproducible basic patterns are produced both on the surface and inside transparent materials. Period patterning for the application to display panel is widely investigated. Also, the submicron dot and line patterns are fabricated inside fused silica glass, which is important for the formation of diffraction grating in integrated optical circuit. finally, we demonstrate the utility of the femtosecond laser application to optical memory by fabricating the three-dimensional dot patterns.

• 대한전자공학회논문지
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• 제21권3호
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• pp.39-45
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• 1984

Submicron gratings are fabricated holographically on thin film single mode and multimode waveguides. Thin film waveguides are made by spin-coating polyurethane solution on the substrates of microscope slide glass and Corning 7059 glass. In order to characterize thin film waveguides, the refract사e index and the thickness of thin films are measured by using the m-line spectroscopy. The fabricated gratings are tested as a grating coupler, a mode converter, and a beam splitter. Also chirped gratings are fabricated to observe beam expansion phenomena and thus the possibility of the wavelength demultiplexing.

• 융합신호처리학회 학술대회논문집
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• 한국신호처리시스템학회 2000년도 추계종합학술대회논문집
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• pp.145-148
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• 2000

Position-determining capacity is a very important condition in equipments for manufacturing semi-conductor or various instruments to measure physical displacement quantities of a moving object in submicron such as a distance of movement, direction, etc. and the accuracy of total system is influenced by detecting accuracy of these equipments. Therefore in this paper we have optically made up laser linear encoder based on optical diffraction principle to measure these displacement quantities and have processed optical signal using hardware-setup. In consequence we had acquired displacement for movement of scale using a diffraction grating by the accuracy of 0.5${\mu}{\textrm}{m}$ and had digitalized moving quantities of scale.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.617-620
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• 1999

In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

• 한국광학회지
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• 제21권1호
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• pp.6-11
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• 2010

아크릴레이트계 모노머를 사용한 최적화 된 포토폴리머에 안트라센 형광폴리머를 첨가하여 형광 특성을 가지는 포토폴리머를 제조하고, 514 nm 레이저를 이용하여 2-beam coupling 방법으로 형광 포토폴리머 필름 위에 회절격자를 형성하였다. 기록 시작 후 30초 이내에 선명한 fluorescent line pattern 이 형성되었으며, 회절격자 형성 뒤, 패턴이 형성된 부분에서 형광 세기의 증가가 관찰되었다. 기록 시 간섭 빔 앞에 mask pattern 을 이용하여 $50\;{\mu}m$ gap electrode 패턴을 형성하였다. 이 때 형성된 패턴은 micron scale gap패턴 안에 회절격자로부터 생성된 submicron scale의 grating line을 보였다. 이는 beam의 광 고분자 film 표면에 대한 각도($3.6^{\circ}$, $15^{\circ}$), 패턴에 사용된 광 고분자의 굴절률 등으로부터 Bragg's equation 을 사용하여 계산된 이론적인 grating 간격 ($0.6\;{\mu}m$) 과 오차범위 안에서 일치 하였다.