The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Analysis on Degradation of Poly-Si TFT`s and Fabrication of Depressed Poly-Si TFT

열화가 억제된 다결성 실리콘 박막 트랜지스터의 제작 및 소자의 열화 특성 분석

  • Published : 2001.10.01
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Abstract

The on-current of offset and LDD structured devices in slightly decreased while the off-current are remarkably reduced and almost constant independent of gate and drain voltage because offset and LDD regions behave as a series resistance and reduce the lateral electric field in the drain depletion. Degradation of these devices is dependent upon the offset and LDD length rather than doping concentration in these regions. Also, degradation mechanism has been related to the interface generation rather than the hot carrier injection into gate oxide.

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References

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