한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제14권8호
  • /
  • Pages.634-639
  • /
  • 2001
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

$Cl_{2}O_{2}$ 가스에 의한 크롬 박막의 식각 특성 고찰

The Etching Characteristics of Cr Films by Using $Cl_{2}O_{2}$ Gas Mixtures

  • 박희찬 (국방과학연구소 종합시험단) ;
  • 강승열 (한국전자통신연구원 회로소자연구소) ;
  • 이상균 (한국전자통신연구원 회로소자연구소) ;
  • 최복길 (공주대학교 정보통신공학부) ;
  • 권광호 (한서대학교 전자공학과)
  • 발행 : 2001.08.01
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초록

We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

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