$Cl_{2}O_{2}$ 가스에 의한 크롬 박막의 식각 특성 고찰

The Etching Characteristics of Cr Films by Using $Cl_{2}O_{2}$ Gas Mixtures

  • 박희찬 (국방과학연구소 종합시험단) ;
  • 강승열 (한국전자통신연구원 회로소자연구소) ;
  • 이상균 (한국전자통신연구원 회로소자연구소) ;
  • 최복길 (공주대학교 정보통신공학부) ;
  • 권광호 (한서대학교 전자공학과)
  • 발행 : 2001.08.01

초록

We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

키워드

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