The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Microstructural, Electrical and Optical Features of ZnO Thin Films Prepared by RF Sputter Techniques

  • Cho, Nam-Hee (Department of Materials Science and Engineering, Inha University) ;
  • Park, Jung-Ho (Department of Materials Science and Engineering, Inha University) ;
  • Kim, Byung-Jin (Department of Materials Science and Engineering, Inha University)
  • Published : 2001.06.01
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Abstract

Thin films of ZnO and Al doped ZnO were prepared by rf magnetron sputter techniques. When the oxygen fraction in Ar-O$_2$ sputter gas was about 2.0%, the films exhibited the composition of Zn:O=1.05:1. The films prepared at 250 W contain larger grains than the films grown at 100 W. However, high deposition rate seems to deteriorates the crystallinity as well as Al-substitution, resulting in lower concentration of mobile electrons. The Al-doped ZnO films which were deposited at $500^{\circ}C$ show resistance of 1$\times$10$^-2$ Wcm; optical band gap of the films ranges from 3.25 to 3.40 eV. These electrical and optical features are related with microstructural as well as crystalline characteristics of the films.

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References

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