DOI QR코드

DOI QR Code

Quasi-Continuous Operation of 1.55- μm Vertical-Cavity Surface-Emitting Lasers by Wafer Fusion

  • Song, Dae-Sung (Department of Physics, Korea Advanced Institute of Science and Technology) ;
  • Song, Hyun-Woo (Department of Physics, Korea Advanced Institute of Science and Technology) ;
  • Kim, Chang-Kyu (Department of Physics, Korea Advanced Institute of Science and Technology) ;
  • Lee, Young-Hee (Department of Physics, Korea Advanced Institute of Science and Technology) ;
  • Kim, Jung-Su (Electronics and Telecommunications Research Institute)
  • 투고 : 2001.05.02
  • 발행 : 2001.09.01

초록

Room temperature quasi-continuous operation is achieved near 1556 nm with threshold current as low as 2.2 mA from a 5.6-${\mu}{\textrm}{m}$ oxide-aperture vertical-cavity surface-emitting laser. Wafer fusion techniques are employed to combine the GaAs/AlGaAs mirror and the InP-based InGaAs/InGaAsP active layer. In this structure, an $Al_x/O_y$/GaAs distributed bragg reflector and intra-cavity contacts are used to reduce free carrier absorption.

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참고문헌

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