- Volume 4 Issue 3
Free exciton transitions and Varshni′s coeffecients for GaN epitaxial layers grown by horizontal LP - MOCVD
- Lee, Joo-in (Nano surface Group, Korea Research Institute of Standards and Science) ;
- Leem, Jae-Young (Nano surface Group, Korea Research Institute of Standards and Science) ;
- Son, J.S. (School of Architecture, Environment and LIfe Science, Kyungwoon University) ;
- Viswanath, A. Kasi (C-MET Panchawati)
- Published : 2000.10.01
We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.