한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제13권6호
  • /
  • Pages.509-513
  • /
  • 2000
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

열형 마이크로센서용 백금박막형 미세발열체의 제작과 그 특성

Fabrication of Pt Thin-film Type Microheater for Thermal Microsensors and Its Characteristics

  • 정귀상 (동서대학교 정보통신공학부) ;
  • 홍석우 (삼성종합기술원 MEMS Lab.)
  • 발행 : 2000.06.01
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초록

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

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참고문헌

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