초크랄스키 실리콘 단결정에서 인상 속도의 거시적 변동이 성장 결함 형성에 미치는 영향

Effects of a Macroscopic Fluctuation in Pulling Rate on the Formation of Grown-in Defects in Cz-Si Single Crystal

In a 200 mm Cz-Si crystal, a macroscopic fluctuation in pulling rate was intentionally introduced then the variations of the pulling rate and the formation behaviors of grow-in defects were compared. The diameters of the OSF-ring and the FPD area were affected by the fluctuation in the region above 1100℃. The COP density depended on the diameter of the OSF-ring. ΔOi and BMD were affected by the fluctuation in the region near 1000Δ. As the result, when a macroscopic fluctuation in pulling rate is introduced, the quality of crystal in the region of 150 mm from the growth interface should be reviewed carefully because it can be affected by the fluctuation.