Journal of Industrial Technology (산업기술연구)

  • Volume 19
  • /
  • Pages.101-105
  • /
  • 1999
  • /
  • 1229-9588(pISSN)
  • /
  • 1598-1371(eISSN)
Kangwon National University, Institute of Industrial Technology (강원대학교 산업기술연구소)
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Characteristics of Ta2O5 thin film prepared by RTMOCVD

RTMOCVD법에 의해 제조된 Ta2O5 박막의 특성

  • 소명기 (강원대학교 신소재공학과) ;
  • Published : 1999.12.31
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Abstract

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

Keywords

Acknowledgement

Supported by : 학술진흥재단