마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)
- 제6권4호
- /
- Pages.23-33
- /
- 1999
- /
- 1226-9360(pISSN)
- /
- 2287-7525(eISSN)
유한요소법에 의한 대전력 IGBT 모듈의 열.응력해석
Thermal and Stress Analysis of Power IGBT Module Package by Finite Element Method
초록
유한요소법을 이용한 IGBT 3상 풀브릿지 모듈의 열.응력 해석을 수행하였다. 패키지 재료에 의한 영향을 살피고자 AIN과
A finite element method was employed fort thermal and stress analyses of an IGBT module of 3-phase full bridge. The effect of material parameters such as substrate material, substrate area, solder thickness on the temperature and stress distributions of the module packages has been investigated. Thermal analysis results have also been compared by setting of boundary conditions such as equivalent heat transfer coefficient or constant temperature at a base metal surface of the package. The increase of ceramic substrate area up to 3 times does little contribution to the reduction(8.9%) of thermal resistance, while contributed a lot to the reduction(60%) of thermal stress. Thicker solder resulted in higher thermal resistance but did slightly reduced thermal stresses. It is revealed by the stress analysis that maximum stress was induced at the region of copper pads which are bonded with ceramic substrate.
키워드