Journal of the Optical Society of Korea

  • 제3권1호
  • /
  • Pages.10-14
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  • 1999
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  • 1226-4776(pISSN)
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  • 2093-6885(eISSN)
한국광학회 (Optical Society of Korea)
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Characterization of Doped Silicon from 0.1 to 2.5 THz Using Multiple Reflection

  • Jeon, Tae-In (Department of Electrical Engineering, Korea Maritime University)
  • 투고 : 1999.01.12
  • 발행 : 1999.03.01
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초록

Via THz Time domain spectroscopy, the characterization of high conductive n-type, 1.31Ω cm silicon can be measured by directly analyzing the multiple reflections using Fabry-Perot theory. The magnitude and phase difference of total transmission show good agreement between theoretical and experimental values over a 2.5 THz frequency range with complex index of refraction and power absorption. The measured absorption and dispersion are strongly frequency-dependent, and all of the results are well fit by a Cole-Davidson type distribution.

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참고문헌

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피인용 문헌

  1. A Multiple Angle Method for THz Time-Domain Material Characterization vol.3, pp.5, 2013, https://doi.org/10.1109/TTHZ.2013.2278460