Journal of the Korean Institute of Telematics and Electronics T (전자공학회논문지T)
- Volume 35T Issue 1
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- Pages.22-28
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- 1998
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- 1226-9115(pISSN)
Design and Implementation of a Single Bias FET Source Mixer
- Kim, Hwoa-Yuol (Department of Electronic Engineering, Kookmin University) ;
- Lee, Sung-Woo (Department of Electronic Engineering, Kookmin University) ;
- Lim, Kyung-Taek (Departmentof Electronic Engineering, Inchon J.T. College) ;
- Cho, Hong-Goo (Department of Electronic Engineering, Kookmin University)
- Published : 1998.06.01
Abstract
A new type of FET source mixer with a single bias voltage has been presented. It is designed to operate at Vds=0 [V] with only one positive supply voltage, which makes mixer circuits simple. The proposed mixer has shown improved stability and less sensitivity to both bias and LO power compared with conventional active mixers. It also shows lower conversion loss than that of diode mixers. The minimum conversion loss measured at RF frequency of 5.6㎓ is 0.6㏈ for a LO frequency of 5.8㎓.
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