전자공학회지 (The Magazine of the IEIE)
- 제25권7호
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- Pages.53-63
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- 1998
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- 1016-9288(pISSN)
FRAM개발동향 및 신개념 FRAM
초록
This paper reviews development trends of ferroelectric memories. Materials requirements, integration issues, device structures are reviewed for 1T-1C and 1Tr type FRAM. Other types of FRAM such as DSRAM and SFRAM are also described. Limitations in FRAM development are discussed for the viewpoint of memory concept and material properties. Finally, novel FRAM structures and operational concepts are proposed in order to avoid such limitations.
키워드