The Magazine of the IEIE (전자공학회지)
- Volume 25 Issue 7
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- Pages.53-63
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- 1998
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- 1016-9288(pISSN)
FRAM개발동향 및 신개념 FRAM
Abstract
This paper reviews development trends of ferroelectric memories. Materials requirements, integration issues, device structures are reviewed for 1T-1C and 1Tr type FRAM. Other types of FRAM such as DSRAM and SFRAM are also described. Limitations in FRAM development are discussed for the viewpoint of memory concept and material properties. Finally, novel FRAM structures and operational concepts are proposed in order to avoid such limitations.
Keywords