Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Structural and Electrical Properties of PLZT Thin Films Prepared by Laser Ablation

레이저 에블레이션법으로 제작된 PLZT 박막의 구조 및 전기적 특성에 관한 연구

  • 장낙원 (연세대학교 전기공학과) ;
  • 마석범 (연세대학교 전기공학과) ;
  • 백동수 (연세대학교 전기공학과) ;
  • 최형욱 (경원대학교 전기전자공학부) ;
  • 박창엽 (연세대학교 전기공학과)
  • Published : 1998.10.01
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Abstract

PLZT thin films were fabricated with different Zr/Ti ratios by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Si substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, $O_2$ pressure 200m Torr. 2/55/45 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$\ulcorner=1550 and dielectric loss was 0.03 at 10kHz. At 2/70/30 PLZT thin film, coercive field and remnant polarization was respectively 19[kV/cm], 8[$\mu$C/$\textrm{cm}^2$]. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

Keywords

References

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