Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Si Micromachining for MEMS-IR Sensor Application

결정의존성 식각/기판접합을 이용한 MEMS용 구조물의 제작

  • 박홍우 (한국과학기술연구원 정보재료소자연구센터) ;
  • 주병권 (한국과학기술연구원 정보재료소자연구센터) ;
  • 박윤권 (서울시립대학교 전자공학) ;
  • 박정호 (고려대학교 전자공학) ;
  • 김철주 (서울시립대학교 전자공학) ;
  • 염상섭 (한국과학기술연구원 정보재료소자연구센터) ;
  • 서상회 (한국과학기술연구원 정보재료소자연구센터) ;
  • 오명환 (한국과학기술연구원 정보재료소자연구센터)
  • Published : 1998.10.01
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Abstract

The silicon-nirtide membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PRO($PbTiO_3$ ) layer for a IR detection was coated on the membrane and its characteristics were measured. The a attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer were eliminated through the method of bonding/etching of silicon wafer. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by the PTO layer were measured, too.

Keywords

References

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