한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제11권9호
  • /
  • Pages.746-751
  • /
  • 1998
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

간섭방법을 이용한 비정질 $As_40Ge_{10}S_{35}Se_{15}$ 박막에서의 광유기 이방성 크기 측정

Estimation of the Anisotropy Magnitude in Amorphous $As_40Ge_{10}S_{35}Se_{15}$ Thin Films by an Interference Method

  • 전진영 (광운대학교 공대 전기재료공학과) ;
  • 박수호 (광운대학교 공대 전기재료공학과) ;
  • 이현용 (광운대학교 신기술연구소) ;
  • 정홍배 (광운대학교 공대 전기재료공학과)
  • 발행 : 1998.09.01
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초록

There are several methods capable of determining he magnitude of optical anisotropy, such as spectrometric ellipsometry and polarized light reflectometry. The interference method is estimated to be no influence of surface scattering. The magnitude of anisotropy is a-As/sub 40/Ge/sub 10/S/sub 35/Se/sub 15/ thin film is analyzed by the reflection interference analysis method based on the difference depending on a phase of s- and p-polarized light. The theoretically analyzed value is compared with the result obtained by the measured technique.

키워드

참고문헌

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