ECR 플라즈마와 습식 식각으로 게이트 리세스한 AlGaAs/InGaAs/GaAs PHEMT 소자의 전기적 특성연구

A Study of Electrical Properties for AlGaAs/InGaAs/GaAs PHEMT s Recessed by ECR Plasma and Wet Etching

  • 발행 : 1998.05.01

초록

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

키워드

참고문헌

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