전자공학회논문지D (Journal of the Korean Institute of Telematics and Electronics D)
- 제35D권2호
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- Pages.25-32
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- 1998
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- 1226-5845(pISSN)
플라즈마 식각 모델링 및 3차원 토포그래피 시뮬레이터 개발
Modeling of plasma etching and development of three-dimensional topography simulator
초록
In this paper, we report the result of the three-dimensional topography simultor, 3D-SURFILER(SURface proFILER) for the simulation of topographical evalution of the surface, curing a plasma etching process. We employed cell-removal algorithm to represent the topographical evoluation of the surface. The visibility with shadow effect was developed and applied to the spillover algorithm. To demonstrate the capability of 3D-SURFILER, we compared with simulated profiles with the SEM picture for dry and reactive ion etching(RIE) of the Si
키워드