The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Chemical Vapor Deposition of Silicon Carbide Thin Films Using the Single Precursor 1,3-Disilabutane

  • Lee, Kyung-Won (Korea Research Institute of Chemical Technology Yusong) ;
  • Boo, Jin-Hyo (Korea Research Institute of Chemical Technology Yusong) ;
  • Yu, Kyu-Sang (Korea Research Institute of Chemical Technology Yusong) ;
  • Kim, Yunsoo (Korea Research Institute of Chemical Technology Yusong)
  • Published : 1997.09.01
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Abstract

Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

Keywords

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