USE OF SINGLE PRECURORS FOR THE PREP ARATION OF SILICON CARBIDE FILMS

Heteroepitaxial growth of cubic silicon carbide films on Si(001) and Si(111) substrates at temperatures 900-$1000^{\circ}C$ has been achieved by high vacuum chemical vapor deposition using the single precursor 1, 3-disilabutane without carrying out the carbonization process of the substrate surfaces. The deposition temperature range is much lowered compared with conventiontional chemical vapor deposition where separate sources for silicon and carbon are employed. The deposition procedure is quite simple and safe. The qualities of the films were found to be very good judging from the results obtained by various characterization techniques including reflection high energy electron diffraction, X-ray diffraction, X-ray pole figure analysis, Rutherford backscattering spectrometry, Auger depth profiling, and transmission electron diffraction.