전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제33A권12호
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- Pages.77-82
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- 1996
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- 1016-135X(pISSN)
텅스텐 폴리사이드 전극에 따른 게이트 산화막의 내압 특성
Breakdown characteristics of gate oxide with tungsten polycide electrode
초록
The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry
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