In this paper, we propose a hybrid blind equalizer with TEA and SG (stop & Go) algorithm with switching point a 0 dB of MSE value for improvement of convergence performance, where TEA is used initially to open the eye and then SG algorithm as rapid convergence is employed. The switching point is selected at the point of 0 dB MSE level because of settling the coefficients of blind equalier. As a result of computer simulatons for 8-PAM in the non-minimum phase channel, the proposed algorithm has better convergence speed as 3,500 ~ 4,500 iterations and has better MsE about 3 ~ 6 dB than those of original TEA. Also, computational cost of proposed algorithm is reduced as 5 ~ 16% than that of original TEA. and, the proposed algorithm has better convergence than SG algorithm as 8,500 ~ 17,500 iteratins but, the MSE is similar to original SG.

An electric field induced by a point dipole soruce within a conductor-backed lossy dielectric slab above the earth is calculated by anumerical method. the calcualtion is peformed on the plane which is parallel to the conductor plane and containing the point dipole soruce. Computed S$_{21}$ values of two parallel planar dipole antennas and two collinear planar dipole antennas are compared against each other, as well as the electic field magnitudes in those arrangements.

In this paper, the radiation pattern of the monopole antenna mounted on the portable phone is analyzed. The analyzed model consists of a rectangular conductor box and a monopole antenna. Even though the radiation pattern of the monopole has been well known, the monopole antenna mounted on the portable phone has not been fully studied. Because of the conductor box, portable phone acts as an unbalanced dipole antenna whoe radiation patterns deviate fro those of th econventional isolated monopole antenna. Therefore, the analysis of the radiation patterns of unbalanced dopole antenna is necessary. Using the moment method, its radiation patterns are analyzed and the numerical results are verified through the measurements. In addition, the radiation patterns depending on various length of the conductor box and the monopole antenna are also presented and the dimension of the portable phone which gives excellent radiation characteristics are derived from the analyzed results.

This paper is concenred with a finite volume time domain (FVTD) method for the analyses of transmission efficiency of electromagnetic wave propagation in tunnels with bend and fold. This method is gased on the volume integratio sof the maxwell's equation with respected to arbitrary shaped small polyhedron cells. The advantages of the present mehtod are that the algorithm is very simple since the coordinate system is restricted only to the cartesian, and so the arbitrary shaped boundaries can easily be dealt with since the fields at every center point of the cells are assigned in an average fashion.

In this paper, we modeled the complex dielectric constant and analyzed the projpagation characteristics of a FR-4 composite substrate with different compositions. From the wideband dielectric modeling and the propagation loss analysis of FR-4 composites that consists of FR-4 resin and E-glass reinforcement,we have found that the propagation loss and velocity increase with the volume fraction of FR-4 resin above 1 GHz. These results are helpful in determining to deisgn optimum substrate composition ratio and cross-sectional geometry of high-speed and high-density transmission line.

In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V$_{BE,ON}$ current gain, input and output characteristics, V$_{CE, OFF}$, R$_{E}$, R$_{C}$ and analyzed the origins, and extracted the qualitativ econditions for a stable HBTs against the temperature variation. Finally, in order to keep HBTs stable with respect to the variation of temperature, the valance-band-energy-discontinuity at emitter-base heterojunction should be large enough to enhance the effect of carrier suppression at a relatively high temperature. In addition the recombination centers, especially around collector junction, should be removed and the area of emitter and collector junction should be identical as well.

Cl-based gas chemistry is generally used to etching for al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with H$_{2}$O due to air exposure and results in Al corrosion. In this study, the corrosion phenomena of Al wer examined with XPS(X-ray photoelectron spectroscopy) and SEM (scanning electorn microscopy). It was confirmed that chlorine mainly existed at the grian boundary of Al alloy after plasma etching of Al alloy with cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al alloy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.

In this paper, a simple fabrication technique of an air-bridge for interconnection of isolated electrodes of microwave active and passive devices and MMIC's is proposed. The proposed air-bridge proceses are mainly combinations of thermal evaporation, positive photoresist and image reversal processes for easy lift-off of up to 2.0 .mu.m thick metal. According to the resutls of air-birdge processes, it is confirmed that air-gap and thickness of theair-bridge are about 3.5.mu.m, and 2.0.mu.m, respectively. And it is also possible to make the fine air-bridge with widths of 5~60.mu.m and post-intervals of 25~200.mu.m withot collapse. finally, GaAs power MESFET's and rectangular spiral inductors are fabricatd and measured in order to confirm of feasibility of the proposed air-bridge processes. The MAG of the fabricated power MESFET's is 10dB at 10GHz, and the inductance of the (200.mu. * 6 turns) rectangular spiral inductors 4.5 nH inX-band.

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

A CMP system is newly proposed and analyzed by a home-made computer progarm. The proposed system is possibly to lower bull's eye effects such that the planarity of a wafer surface using a CMP system can be drasitcally improved. The optimum conditions for a design of the proposed system are verified using the home-made simulation program. For the proposed CMP system with a 12" diameter of platen, the optimum design conditons are the 0.09", 0.10", 0.12", and 0.14", clearance from the platern edge for wafer diameters of 5", 6", 8", and 12", respectively. These clear distance such as 0.09", 0.10", 0.12", and 0.14" are optimum lengths of the sample wafers extended ffrom the platen edge. In other words, shorter orbital lengths result in lowering of Bull's eye effects.

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

The electrochemical spike oscillations at the nickel (Ni) electrode/(0.05M KHC$_{8}$H$_{4}$O$_{4}$) buffer solution (pH 9) interface have been studied using voltammetric and chronoamperometric methods. The nature of the periodic cathodic current spikes is the activation controlled currents due to the hydrogen evolution reaction and depends onthe fractioanl surface coverage of the adsorbed hydrogen intermediate or the cathodic potential. There is two kinds of the waveforms corresponding to two kinds of the cathodic current spike oscillations. The widths, periods, and amplitudes of the cathodic current spikes are 4 ms or 5ms, 151 ms or 302 ms, and < 30 mA or < 275 mA, respectively. The fast discharge and recombination reaction steps are 1.5 times and twice and faster than the slow discharge and recombination reaction steps. The fast and slow discharge and recombination reaction steps are 1.5 times and twice faster than the slow discharge and recombination reaction steps. The fast and slow discharge and recombination reactions corresponding to the fast and slow adsorption sites at the Ni cathode.

Optical conditions of a reflective multicolor STM-LCD based on the electrical control of birefrignece are analyzed on the CIE chromaticity diagram. The luminance and the area of the locus on the cIE chromaticity diagram are the two factors to be considered in the design of an LC cell to display white, red, green, and blue. The characteristics of a test cell agrees well with numerical simulation. A completed 320$\times$240 module is addressed by a designed PWM driving circuit.

This paper presents a new security verification technique based on an image encryption by a white noise image that serves as an encryption key. In the proposed method that resembles holographic process, the encryption process is executed digitally using FFT routine which gives chances for separating corruptive noise from reconstructed primary image The encoded image thus obtained is regarded as an nterference pattern caused by two lightwaves transmitted through the primary image and the white noise image. The decoding process is executed optically and in real-tiem fashion where lightwave transmitted through the white noise image illuminates the encrypted card.

A current-controlling transadmittance amplifier is proposed. It consists of a linear transadmittor and a current gain cell followed by three current mirrors. The proposed transadmittance amplifier is used to design a current-controlling frequency-dependent negative resistor (FDNR). Experimental results are presented to verify theoretical predictions. The results show close agreement between predicted behaviour and experimental performance.

A novel high speed VLSI architecture and its VLSI realization methodologies for a motion estimation processor based on full search block matching algorithm are presentd. The presented architecture is designed in order to be suitable for highly parallel and pipelined processing with identical PE's and adjustable in performance and hardware amount according to various application areas. Also, the throughput is maximized by enhancing PE utilization up to 100% and the chip pin count is reduced by reusing image data with embedded image memories. Also, the uniform and identical data processing structure of PE's eases VLSI implementation and the clock rate of external I/O data can be made slower compared to internal clock rate to resolve I/O bottleneck problem. The logic and spice simulation results of the proposed architecture are presented. The performances of the proposed architecture are evaluated and compared with other architectures. Finally, the chip layout is shown.