실리콘 에피층 성장과 실리콘 에칭기술을 이용한 Bare Chip Burn-In 테스트용 인터컨넥션 시스템의 제조공정

Fabrication Processes of Interconnection Systems for Bare Chip Burn-In Tests Using Epitaxial Layer Growth and Etching Techniques of Silicon

Multilayered silicon cantilever beams as interconnection systems for bare chip burn-in socket applications have been designed, fabricated and characterized. Fabrication processes of the beam are employing standard semiconductor processes such as thin film processes and epitaxial layer growth and silicon wet etching techniques. We investigated silicon etch rate in 1-3-10 etchant as functions of doping concentration, surface mechanical stress and crystal defects. The experimental results indicate that silicon etch rate in 1-3-10 etchant is strong functions of doping concentration and crystal defect density rather than surface mechanical stress. We suggested the new fabrication processes of multilayered silicon cantilever beams.