Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 4 Issue S2
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- Pages.84-89
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- 1995
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- 1225-8822(pISSN)
CHARACTERISTICS OF THE HETEROEPITAXIAL Si1-xGex FILMS GROWN BY RTCVD METHOD
- Chung, W.J. (Electronic device & system research Lab. Research Institute of Industrial Science & Technology) ;
- Kwon, Y.K. (Electronic device & system research Lab. Research Institute of Industrial Science & Technology) ;
- Bae, Y.H. (Electronic device & system research Lab. Research Institute of Industrial Science & Technology) ;
- Kim, K.I. (Electronic device & system research Lab. Research Institute of Industrial Science & Technology) ;
- Kang, B.K. (Department of Electrical Engineering POSTECH) ;
- Sohn, B.K. (Department of Electronics Kyungpook National University)
- Published : 1995.06.01
Abstract
The growth and the film characteristics of heteroepitaxial
Keywords