Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 4 Issue S2
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- Pages.79-82
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- 1995
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- 1225-8822(pISSN)
The Properties of Nitrogen Implanted Tungsten Diffusion Barrier for Cu Metallization
- Kim, D.J. (Micro Process Development, Smasung Electronics) ;
- Kim, D.J. (Semiconductor Materials Laboratory. Korea Institute of Science and Technology) ;
- Kim, Y.T. (Semiconductor Materials Laboratory. Korea Institute of Science and Technology) ;
- Lee, J.Y. (Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology)
- Published : 1995.06.01
Abstract
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