한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)
- 제4권2호
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- Pages.131-133
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- 1994
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
사파이어 기판을 사용한 태양전지용 실리콘 박막의 저온액상 에피탁시에 관한 연구
Low temperature growth of silicon thin film on sapphire substrate by liquid phase epitaxy for solar cell application
- Soo Hong Lee (Photovoltaic Device Lab., Materials & Devices Research Center, Samsung Advanced Institute of Technology, Suwon 440-600, Korea) ;
- Martin A. Green (Center for Photovoltaic Devices and Systems, University of New South Wales, Kensington N.S.W. 2033, Australia)
- 발행 : 1994.06.01
초록
Deposition of silicon on pretreated sapphire substrates has been investigated by the liquid phase epitaxy method at low temperatures. An average 14
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