Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 2 Issue 4
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- Pages.424-432
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- 1993
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- 1225-8822(pISSN)
MOCVD Growth of AlGaAs/InGaAs/GaAs Pseudomorphic Structures and Transport Properties of 2DEG
AlGaAs/InGaAs/GaAs Pseudomorphic 구조의 MOCVD 성장 및 2차원 전자가스의 전송특성
Abstract
AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at
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