텅스텐의 화학증착시 Si소모에 관한 열역학적 분석

A Thermodynamic Analysis on Silicon Consumption during The Chemical Vapper Deposition of Tungsten

  • 정태희 (서울대학교 공과대학 금속공학과) ;
  • 이정중 (서울대학교 공과대학 금속공학과)
  • 발행 : 1990.03.01

초록

Thermodynamic analysis on silicon consumpton during the chemical vapor deposition of tungten was carried out by calculation equilibrium concerations of all possible product species utilizing a computer progrom according to VCS.(Villars-Cruise-Smith) algorithm. The calculation could show various reaction paths which dominate the tungsten deposition under different process conditions. According to the calculation, the consumption of silicon can also be reduced at a lower total pressure SiH4 without H2 as the reacting gas is most effective for suppression of the excessive consumption of silicon during the deposition process.

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