초록
도핑된 실리콘半導體와 有機容媒($C_6H_6$, $CH_3OH$, $C_2H_5OH$) 界面의 空間電荷效果와 도핑되지 않은 多結晶 硏化갈리움半島體와 電解質(NaCl, KCl, KI 溶液) 界面의 제타電位 反轉現象을 小電氣泳動測定에 依하여 定性的인 解析을 하였다. 有機容媒內의 空間電荷效果는 무시 할 수 있으며 제타 電位 反轉現象은 도핑되지 않은 多結晶 硏化 갈리움과 電解質 界面의 表面位置, 特性的 吸着, 電氣陰性度, 特性的으로 吸着된 이온의 크기에 따라 決定됨을 알았다. 콜로이드半導體의 解析面은 表面에서 結定된 거리에 位置하면 Helmholtz外面(OHP)에 거의 一致한다.
A space charge effect at the doped silicon semiconductor/organic solvent ($C_6H_6$, $CH_3OH$, $C_2H_5OH$) interfaces and a mechanism for two reversals of zeta potentials at the undoped polycrystalline gallium arsenide semiconductor/electrolyte (NaCl, KCl, KI solution) interfaces has been qualitatively analyzed using microelectrophoresis measurements. It has been found that the space charge effect in the organic solvents can be neglected and the two reversals of zeta potentials depend on surface states, specific adsorption, electronegativity and size of specifically adsorbed ions at the undoped polycrystalline gallium arsenide/electrolyte interfaces. The position of shear plane of colloidal semiconductors is a fixed distance from the surface and is almost or exactly coincides with the outer Helmholtz plane (OHP).