대한전기학회논문지 (The Transactions of the Korean Institute of Electrical Engineers)
- 제33권6호
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- Pages.203-211
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- 1984
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- 0254-4172(pISSN)
MOS 광전변화소자의 식적에 관한 연구
A Study on the Experimental Fabrication and Analysis of MOS Photovoltaic Solar Energy Conversion Device
초록
MOS silicon solar cells have been developed using the fixed (interface) charge inherent to thermally oxidized silicon to induce an n-type inversion layer in 1-10 ohm-cm p-type silicon. Higher collection efficiencies are predicted than for diffused junction cells. Without special precautions a conversion efficiency of 14.2% is obtained. A MOS silicon solar cell is described in which an inversion layer forms the active area which is then contacted by means of a MOS grid. The highest efficiency is obtained when the resistivity of the substrate is high.
키워드