Real-time Evolution of Poly (3-hexylthiophene) type-II Phase in P3HT:PCBM Blend thin films

We observed the temperature-dependent evolution and behavior of P3HT type-II phase during a real time annealing process from a cryo-cooled low temperature in the absence and presence of an Al electrode. A poly (3-hexylthiophene) (P3HT) Type-II phase in the P3HT:PCBM films started to form near at $-10^{\circ}C$, regardless of Al layer presence. In the absence of an Al layer, type-II phase was extinct at $30^{\circ}C$. However, the extinction temperature was extended to $50^{\circ}C$ in the presence of the Al layer. Simultaneously, combined with the type-II phase, a 1:3 ordered P3HT type-II (1/3,0,0) super-lattice peak evolved. These type-II domains tended to be formed near the Al electrode layer with higher aligned status than host P3HT crystals.