Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
- /
- Pages.319.1-319.1
- /
- 2014
Investigation of Carrier Transport Mechanism in Schottky Type InAs/GaAs Quantum Dot Solar Cells
- Kim, Ho-Seong ;
- Ryu, Geun-Hwan ;
- Yang, Hyeon-Deok ;
- Park, Min-Su ;
- Kim, Sang-Hyeok ;
-
Song, Jin-Dong
;
-
Choe, Won-Jun
;
- Park, Jeong-Ho
- 김호성 (한국과학기술연구원 광전융합시스템연구단) ;
- 류근환 (한국과학기술연구원 광전융합시스템연구단) ;
- 양현덕 (한국과학기술연구원 광전융합시스템연구단) ;
- 박민수 (한국과학기술연구원 광전융합시스템연구단) ;
- 김상혁 (한국과학기술연구원 광전융합시스템연구단) ;
-
송진동
(한국과학기술연구원 광전융합시스템연구단)
;
-
최원준
(한국과학기술연구원 광전융합시스템연구단)
;
- 박정호 (고려대학교 전기전자전파공학부)
- Published : 2014.02.10
Abstract
We present the results on the indium tin oxide (ITO) Schottky barrier solar cells (SBSCs) with InAs quantum dots (QDs). The dependence of external quantum efficiency on the external bias voltage has been studied to anlayze carrier extraction through tunneling at room temperature.
Keywords
- InAs QD;
- ITO;
- Schottky type solar cell;
- temperature dependent photoluminescence;
- voltage biased dependent external quantum efficiency