Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.273.2-273.2
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- 2014
Fabrication of IGZO-based Oxide TFTs by Electron-assisted Sputtering Process
- Yun, Yeong-Jun ;
- Jo, Seong-Hwan ;
- Kim, Chang-Yeol ;
- Nam, Sang-Hun ;
- Lee, Hak-Min ;
- O, Jong-Seok ;
- Kim, Yong-Hwan
- 윤영준 (한국세라믹기술원) ;
- 조성환 (한국세라믹기술원) ;
- 김창열 (한국세라믹기술원) ;
- 남상훈 ((주)인포비온) ;
- 이학민 ((주)인포비온) ;
- 오종석 ((주)인포비온) ;
- 김용환 ((주)인포비온)
- Published : 2014.02.10
Abstract
Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below