한국정보통신학회:학술대회논문집 (Proceedings of the Korean Institute of Information and Commucation Sciences Conference)
- 한국정보통신학회 2013년도 춘계학술대회
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- Pages.772-775
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- 2013
SiO2 보호막 증착에 따른 p-GaN의 후열처리 효과 연구
- Park, Jin-young (School of Electronics and Computer Engineering Chonnam National University) ;
- Ji, Taeksoo (School of Electronics and Computer Engineering Chonnam National University) ;
- Lee, Jin-hong (Korea Photonics Technology Institute (KOPTI)) ;
- An, Su-chang (Korea Photonics Technology Institute (KOPTI))
- 발행 : 2013.05.22
초록
사파이어 위에 MOCVD로 성장한 p-GaN 위에 PECVD로
We have grown a p-GaN film on sapphire by MOCVD and explored the post-annealing effort on the film after depositing a